Trilayer Graphene Film on Si-SiO2 – 10mm X 10mm


Trilayer Graphene Films-Si-SiO2 – 15mm X 15mm are the subject of intense scientific research due to their unique electronic properties and have potential applications in microelectronics applications micro- and nano-electromechanical systems (MEMS and NEMS), in field effect transistors (FETs), and in  chemical and biological sensors among others.


Trilayer Graphene film on SiO₂/Si 10 mm x 10 mm

Our Trilayer Graphene Film on Si-SiO2 –  10mm X 10mm is grown on a 50 micron-thick copper foil that is coated with single atomic layer of graphene which is deposited via chemical vapor deposition (CVD). For products on Si-SiO2 substrates, it is transferred to the substrate using a wet transfer process. A Monolayer Graphene Film-Si-SiO2 – 10mm X 10mm is flexible allowing for its use in flexible electronics, a growing field. Our Monolayer graphene films 4 pack has the right mix of small size and cost effectiveness to kick start your R&D projects. The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

The product can be prepared in other substrate if required (PET, Quartz).

Graphene Film

Transparency: > 97%

Coverage: > 95%

Thickness (theoretical): 0.345 nm

FET Electron Mobility on Al2O3: 2000 cm2/Vs

FET Electron Mobility on SiO2/Si: 4000 cm2/Vs

Sheet Resistance: 580±50 Ohms/sq (1cm x 1cm)

Grain size: Up to 10 μm

Substrate SiO2/Si

Dry Oxide Thickness: 300 nm (+/-5%)

Type/Dopant: P/Bor

Orientation: <100>

Resistivity: <0.005 Ohm·cm

Thickness: 525 +/- 20 μm

Front surface: Single Side Polished

Back Surface: Etched

Particles: <10@0.3 μm

Product Enquiry